UCSY's Research Repository

Photoelectric Properties of ZnO/Si and Ag Doped ZnO/Si Heterojunctions

Show simple item record

dc.contributor.author Htoon, Thandar
dc.date.accessioned 2019-12-27T07:39:02Z
dc.date.available 2019-12-27T07:39:02Z
dc.date.issued 2019-12-07
dc.identifier.uri http://onlineresource.ucsy.edu.mm/handle/123456789/2459
dc.description.abstract A type of semiconductor heterojunctions was fabricated by ZnO thin film layer deposited on Si substrate. The elementary particles were examined by Energy Dispersive X-rays (EDX). X-ray Diffraction (XRD) analysis was described by structural properties of ZnO and Si layer. The study of ZnO growth morphology on Si substrate was determined by Scanning Electron Microscope (SEM). Then, the electrical and optical characteristics for ZnO-Si solar cell was investigated. Thermally simulated current (TSC) and I-V characteristics under different wavelengths in visible regions were also studied. In this work, the ZnO-Si thin film layer was indicated in photovoltaic effect. Moreover, studying silver contact on ZnO-Si heterojunction was purposed for achieving higher efficiency. en_US
dc.publisher Proceedings of 10th International Conference on Science and Engineering 2019 en_US
dc.relation.ispartofseries ;Vol-2, pp.70-74
dc.subject heterojunctions en_US
dc.subject EDX en_US
dc.subject XRD en_US
dc.subject SEM en_US
dc.subject I-V en_US
dc.subject efficiency en_US
dc.title Photoelectric Properties of ZnO/Si and Ag Doped ZnO/Si Heterojunctions en_US
dc.type Article en_US

Files in this item

This item appears in the following Collection(s)

Show simple item record

Search Repository


My Account